DC model for SiC MOSFETs using artificial neural network optimized by artificial bee colony algorithm
A DC model for silicon carbide (SiC) metal–oxide–semiconductor field effect transistors (MOSFETs) is proposed in this paper using a hybrid modeling method based on the artificial neural network and artificial bee colony (ABC) algorithm. A multi-layer perceptron neural network using the Levenberg–Mar...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
AIP Publishing LLC
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/5ecf265b3d00439ba3c0354692805523 |
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