Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
We report on material improvements to non-filamentary RRAM devices based on Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance...
Guardado en:
Autores principales: | , , , , , , , |
---|---|
Formato: | article |
Lenguaje: | EN |
Publicado: |
IEEE
2018
|
Materias: | |
Acceso en línea: | https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd8 |
Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|