Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements

We report on material improvements to non-filamentary RRAM devices based on Pr0.7Ca0.3MnO3 by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance...

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Autores principales:	Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M. Shelby, Geoffrey W. Burr, Hyunsang Hwang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2018
Materias:	Resistive RAM neural network hardware nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971
Acceso en línea:	https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd8
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spelling	oai:doaj.org-article:5fc8bb6568104ebfaee6c2b4c7bf4cd82021-11-19T00:00:34ZBidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements2168-673410.1109/JEDS.2017.2780275https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd82018-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/8168326/https://doaj.org/toc/2168-6734We report on material improvements to non-filamentary RRAM devices based on Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm. Previous Al/PCMO devices exhibited degraded LRS retention due to the low activation energy for oxidation of the Al electrode, and Mo/PCMO devices showed low conductance contrast. To control the redox reaction at the metal/PCMO interface, we introduce a 4-nm interfacial layer of conducting MoOx as an oxygen buffer layer. Due to the controlled redox reaction within this Al/Mo/PCMO device, we observed improvements in both retention and conductance on/off ratio. We confirm bidirectional analog synapse characteristics and measure “jump-tables” suitable for large scale neural network simulations that attempt to capture complex and stochastic device behavior [see companion paper]. Finally, switching energy measurements are shown, illustrating a path for future device research toward smaller devices, shorter pulses and lower programming voltages.Kibong MoonAlessandro FumarolaSeverin SidlerJunwoo JangPritish NarayananRobert M. ShelbyGeoffrey W. BurrHyunsang HwangIEEEarticleResistive RAMneural network hardwarenonvolatile memoryElectrical engineering. Electronics. Nuclear engineeringTK1-9971ENIEEE Journal of the Electron Devices Society, Vol 6, Pp 146-155 (2018)
institution	DOAJ
collection	DOAJ
language	EN
topic	Resistive RAM neural network hardware nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971
spellingShingle	Resistive RAM neural network hardware nonvolatile memory Electrical engineering. Electronics. Nuclear engineering TK1-9971 Kibong Moon Alessandro Fumarola Severin Sidler Junwoo Jang Pritish Narayanan Robert M. Shelby Geoffrey W. Burr Hyunsang Hwang Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
description	We report on material improvements to non-filamentary RRAM devices based on Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance of these devices as bidirectional analog synapses for on-chip acceleration of the backpropagation algorithm. Previous Al/PCMO devices exhibited degraded LRS retention due to the low activation energy for oxidation of the Al electrode, and Mo/PCMO devices showed low conductance contrast. To control the redox reaction at the metal/PCMO interface, we introduce a 4-nm interfacial layer of conducting MoOx as an oxygen buffer layer. Due to the controlled redox reaction within this Al/Mo/PCMO device, we observed improvements in both retention and conductance on/off ratio. We confirm bidirectional analog synapse characteristics and measure “jump-tables” suitable for large scale neural network simulations that attempt to capture complex and stochastic device behavior [see companion paper]. Finally, switching energy measurements are shown, illustrating a path for future device research toward smaller devices, shorter pulses and lower programming voltages.
format	article
author	Kibong Moon Alessandro Fumarola Severin Sidler Junwoo Jang Pritish Narayanan Robert M. Shelby Geoffrey W. Burr Hyunsang Hwang
author_facet	Kibong Moon Alessandro Fumarola Severin Sidler Junwoo Jang Pritish Narayanan Robert M. Shelby Geoffrey W. Burr Hyunsang Hwang
author_sort	Kibong Moon
title	Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
title_short	Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
title_full	Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
title_fullStr	Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
title_full_unstemmed	Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements
title_sort	bidirectional non-filamentary rram as an analog neuromorphic synapse, part i: al/mo/pr<sub>0.7</sub>ca<sub>0.3</sub>mno<sub>3</sub> material improvements and device measurements
publisher	IEEE
publishDate	2018
url	https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd8
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_version_	1718420670031855616

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements

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