Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> Material Improvements and Device Measurements

We report on material improvements to non-filamentary RRAM devices based on Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> by introducing an MoOx buffer layer together with a reactive Al electrode, and on device measurements designed to help gauge the performance...

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Enregistré dans:
Détails bibliographiques
Auteurs principaux: Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M. Shelby, Geoffrey W. Burr, Hyunsang Hwang
Format: article
Langue:EN
Publié: IEEE 2018
Sujets:
Resistive RAM
neural network hardware
nonvolatile memory
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Accès en ligne:https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd8
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https://doaj.org/article/5fc8bb6568104ebfaee6c2b4c7bf4cd8

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