Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

Abstract In this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D t...

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Autores principales:	Andrey A. Pil’nik, Andrey A. Chernov, Damir R. Islamov
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/5fd90716bfe94b3aaa11b192464cdac2
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spelling	oai:doaj.org-article:5fd90716bfe94b3aaa11b192464cdac22021-12-02T16:50:22ZExact statistical solution for the hopping transport of trapped charge via finite Markov jump processes10.1038/s41598-021-89280-72045-2322https://doaj.org/article/5fd90716bfe94b3aaa11b192464cdac22021-05-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-89280-7https://doaj.org/toc/2045-2322Abstract In this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.Andrey A. Pil’nikAndrey A. ChernovDamir R. IslamovNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Andrey A. Pil’nik Andrey A. Chernov Damir R. Islamov Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
description	Abstract In this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.
format	article
author	Andrey A. Pil’nik Andrey A. Chernov Damir R. Islamov
author_facet	Andrey A. Pil’nik Andrey A. Chernov Damir R. Islamov
author_sort	Andrey A. Pil’nik
title	Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
title_short	Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
title_full	Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
title_fullStr	Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
title_full_unstemmed	Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes
title_sort	exact statistical solution for the hopping transport of trapped charge via finite markov jump processes
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/5fd90716bfe94b3aaa11b192464cdac2
work_keys_str_mv	AT andreyapilnik exactstatisticalsolutionforthehoppingtransportoftrappedchargeviafinitemarkovjumpprocesses AT andreyachernov exactstatisticalsolutionforthehoppingtransportoftrappedchargeviafinitemarkovjumpprocesses AT damirrislamov exactstatisticalsolutionforthehoppingtransportoftrappedchargeviafinitemarkovjumpprocesses
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Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

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