Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO3/GdTiO3/SrTiO3

Abstract The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behaviour of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferroma...

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Autores principales: N. Lebedev, M. Stehno, A. Rana, P. Reith, N. Gauquelin, J. Verbeeck, H. Hilgenkamp, A. Brinkman, J. Aarts
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/60dc6f7bf02a4fe58468dde762b76387
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