The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

Abstract We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integratio...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Simone Frasca, Rebecca C. Leghziel, Ivo N. Arabadzhiev, Benoît Pasquier, Grégoire F. M. Tomassi, Sandro Carrara, Edoardo Charbon
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
Materias:
R
Q
Acceso en línea:https://doaj.org/article/63513650693f4fa984e3e79944393796
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
id oai:doaj.org-article:63513650693f4fa984e3e79944393796
record_format dspace
spelling oai:doaj.org-article:63513650693f4fa984e3e799443937962021-12-02T12:11:34ZThe Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias10.1038/s41598-021-83546-w2045-2322https://doaj.org/article/63513650693f4fa984e3e799443937962021-02-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-83546-whttps://doaj.org/toc/2045-2322Abstract We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called “Michelangelo”, we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration.Simone FrascaRebecca C. LeghzielIvo N. ArabadzhievBenoît PasquierGrégoire F. M. TomassiSandro CarraraEdoardo CharbonNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution DOAJ
collection DOAJ
language EN
topic Medicine
R
Science
Q
spellingShingle Medicine
R
Science
Q
Simone Frasca
Rebecca C. Leghziel
Ivo N. Arabadzhiev
Benoît Pasquier
Grégoire F. M. Tomassi
Sandro Carrara
Edoardo Charbon
The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
description Abstract We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called “Michelangelo”, we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration.
format article
author Simone Frasca
Rebecca C. Leghziel
Ivo N. Arabadzhiev
Benoît Pasquier
Grégoire F. M. Tomassi
Sandro Carrara
Edoardo Charbon
author_facet Simone Frasca
Rebecca C. Leghziel
Ivo N. Arabadzhiev
Benoît Pasquier
Grégoire F. M. Tomassi
Sandro Carrara
Edoardo Charbon
author_sort Simone Frasca
title The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_short The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_full The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_fullStr The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_full_unstemmed The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_sort michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
publisher Nature Portfolio
publishDate 2021
url https://doaj.org/article/63513650693f4fa984e3e79944393796
work_keys_str_mv AT simonefrasca themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT rebeccacleghziel themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT ivonarabadzhiev themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT benoitpasquier themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT gregoirefmtomassi themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT sandrocarrara themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT edoardocharbon themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT simonefrasca michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT rebeccacleghziel michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT ivonarabadzhiev michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT benoitpasquier michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT gregoirefmtomassi michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT sandrocarrara michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT edoardocharbon michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
_version_ 1718394632182693888