The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas form...

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Autores principales: Young Mo Kim, Youjung Kim, Kookrin Char
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/63c03b25d7df47ef85645429e21182bb
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