The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas form...

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Autores principales:	Young Mo Kim, Youjung Kim, Kookrin Char
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/63c03b25d7df47ef85645429e21182bb
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spelling	oai:doaj.org-article:63c03b25d7df47ef85645429e21182bb2021-12-02T16:08:05ZThe role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces10.1038/s43246-021-00179-22662-4443https://doaj.org/article/63c03b25d7df47ef85645429e21182bb2021-07-01T00:00:00Zhttps://doi.org/10.1038/s43246-021-00179-2https://doaj.org/toc/2662-4443A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas formation.Young Mo KimYoujung KimKookrin CharNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ENCommunications Materials, Vol 2, Iss 1, Pp 1-7 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Young Mo Kim Youjung Kim Kookrin Char The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
description	A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas formation.
format	article
author	Young Mo Kim Youjung Kim Kookrin Char
author_facet	Young Mo Kim Youjung Kim Kookrin Char
author_sort	Young Mo Kim
title	The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
title_short	The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
title_full	The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
title_fullStr	The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
title_full_unstemmed	The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
title_sort	role of coherent epitaxy in forming a two-dimensional electron gas at lain1-xgaxo3/basno3 interfaces
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/63c03b25d7df47ef85645429e21182bb
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The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces

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