Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface

Abstract Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon...

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Autores principales:	Cheng-Hsun-Tony Chang, Pei-Cheng Jiang, Yu-Ting Chow, Hsi-Lien Hsiao, Wei-Bin Su, Jyh-Shen Tsay
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6416484f4059496db4dda234f6cd3da8
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spelling	oai:doaj.org-article:6416484f4059496db4dda234f6cd3da82021-12-02T15:09:54ZEnhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface10.1038/s41598-019-45104-32045-2322https://doaj.org/article/6416484f4059496db4dda234f6cd3da82019-06-01T00:00:00Zhttps://doi.org/10.1038/s41598-019-45104-3https://doaj.org/toc/2045-2322Abstract Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔHAg-Si, ΔHNi-Ag, and ΔHNi-Si, for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.Cheng-Hsun-Tony ChangPei-Cheng JiangYu-Ting ChowHsi-Lien HsiaoWei-Bin SuJyh-Shen TsayNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 9, Iss 1, Pp 1-10 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Cheng-Hsun-Tony Chang Pei-Cheng Jiang Yu-Ting Chow Hsi-Lien Hsiao Wei-Bin Su Jyh-Shen Tsay Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
description	Abstract Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔHAg-Si, ΔHNi-Ag, and ΔHNi-Si, for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.
format	article
author	Cheng-Hsun-Tony Chang Pei-Cheng Jiang Yu-Ting Chow Hsi-Lien Hsiao Wei-Bin Su Jyh-Shen Tsay
author_facet	Cheng-Hsun-Tony Chang Pei-Cheng Jiang Yu-Ting Chow Hsi-Lien Hsiao Wei-Bin Su Jyh-Shen Tsay
author_sort	Cheng-Hsun-Tony Chang
title	Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
title_short	Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
title_full	Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
title_fullStr	Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
title_full_unstemmed	Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface
title_sort	enhancing silicide formation in ni/si(111) by ag-si particles at the interface
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/6416484f4059496db4dda234f6cd3da8
work_keys_str_mv	AT chenghsuntonychang enhancingsilicideformationinnisi111byagsiparticlesattheinterface AT peichengjiang enhancingsilicideformationinnisi111byagsiparticlesattheinterface AT yutingchow enhancingsilicideformationinnisi111byagsiparticlesattheinterface AT hsilienhsiao enhancingsilicideformationinnisi111byagsiparticlesattheinterface AT weibinsu enhancingsilicideformationinnisi111byagsiparticlesattheinterface AT jyhshentsay enhancingsilicideformationinnisi111byagsiparticlesattheinterface
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Enhancing silicide formation in Ni/Si(111) by Ag-Si particles at the interface

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