Ratio-based multi-level resistive memory cells

Abstract Ratio-based encoding has recently been proposed for single-level resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding single-bit information, whic...

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Autores principales: Miguel Angel Lastras-Montaño, Osvaldo Del Pozo-Zamudio, Lev Glebsky, Meiran Zhao, Huaqiang Wu, Kwang-Ting Cheng
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/64d1ad883e3744978f35981114bc5d9a
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