Growth technology for ZnSe single crystals with low dislocation density

The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals...

Descripción completa

Guardado en:
Detalles Bibliográficos
Autores principales: Colibaba, Gleb, Nedeoglo, Dumitru
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:
Acceso en línea:https://doaj.org/article/6600da8db2af4668ad694e653378d0eb
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!