Growth technology for ZnSe single crystals with low dislocation density
The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals...
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| Autores principales: | , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6600da8db2af4668ad694e653378d0eb |
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| Sumario: | The influence of the growth temperature, undercooling, growth rate as well as growth
chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch
pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL
spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe
crystals annealed in a Zn melt is higher than 10 Ohm⋅cm, whereas the electrical conductivity
of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is
10 (Ohm⋅cm) at room temperature. |
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