Growth technology for ZnSe single crystals with low dislocation density

Growth technology for ZnSe single crystals with low dislocation density

The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals...

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Autores principales: Colibaba, Gleb, Nedeoglo, Dumitru
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
Materias:
Physics
QC1-999
Electronics
TK7800-8360
Acceso en línea:https://doaj.org/article/6600da8db2af4668ad694e653378d0eb
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spelling oai:doaj.org-article:6600da8db2af4668ad694e653378d0eb2021-11-21T12:07:31ZGrowth technology for ZnSe single crystals with low dislocation density 2537-63651810-648Xhttps://doaj.org/article/6600da8db2af4668ad694e653378d0eb2008-02-01T00:00:00Zhttps://mjps.nanotech.md/archive/2008/article/3757https://doaj.org/toc/1810-648Xhttps://doaj.org/toc/2537-6365The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 10 Ohm⋅cm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm) at room temperature. Colibaba, GlebNedeoglo, DumitruD.Ghitu Institute of Electronic Engineering and NanotechnologiesarticlePhysicsQC1-999ElectronicsTK7800-8360ENMoldavian Journal of the Physical Sciences, Vol 7, Iss 1, Pp 26-31 (2008)
institution DOAJ
collection DOAJ
language EN
topic Physics
QC1-999
Electronics
TK7800-8360
spellingShingle Physics
QC1-999
Electronics
TK7800-8360
Colibaba, Gleb
Nedeoglo, Dumitru
Growth technology for ZnSe single crystals with low dislocation density
description The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals free from subgrain boundaries and twins are suggested. The etch pits are not observed in the basic volume (up to 4 сm ) of grown crystals. It is shown, that PL spectra of as-grown ZnSe crystals consist of the edge radiation only. The resistivity of ZnSe crystals annealed in a Zn melt is higher than 10 Ohm⋅cm, whereas the electrical conductivity of ZnSe:I crystals grown by chemical vapor transport and annealed in a Zn melt is 10 (Ohm⋅cm) at room temperature.
format article
author Colibaba, Gleb
Nedeoglo, Dumitru
author_facet Colibaba, Gleb
Nedeoglo, Dumitru
author_sort Colibaba, Gleb
title Growth technology for ZnSe single crystals with low dislocation density
title_short Growth technology for ZnSe single crystals with low dislocation density
title_full Growth technology for ZnSe single crystals with low dislocation density
title_fullStr Growth technology for ZnSe single crystals with low dislocation density
title_full_unstemmed Growth technology for ZnSe single crystals with low dislocation density
title_sort growth technology for znse single crystals with low dislocation density
publisher D.Ghitu Institute of Electronic Engineering and Nanotechnologies
publishDate 2008
url https://doaj.org/article/6600da8db2af4668ad694e653378d0eb
work_keys_str_mv AT colibabagleb growthtechnologyforznsesinglecrystalswithlowdislocationdensity
AT nedeoglodumitru growthtechnologyforznsesinglecrystalswithlowdislocationdensity
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