Growth technology for ZnSe single crystals with low dislocation density
The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals...
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| Auteurs principaux: | , |
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| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2008
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| Accès en ligne: | https://doaj.org/article/6600da8db2af4668ad694e653378d0eb |
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