Growth technology for ZnSe single crystals with low dislocation density

The influence of the growth temperature, undercooling, growth rate as well as growth chamber construction and furnace temperature profile on the structural perfection of the crystals grown by both physical and chemical vapors transport has been investigated. The conditions for growing of crystals...

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Autores principales: Colibaba, Gleb, Nedeoglo, Dumitru
Formato: article
Lenguaje:EN
Publicado: D.Ghitu Institute of Electronic Engineering and Nanotechnologies 2008
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Acceso en línea:https://doaj.org/article/6600da8db2af4668ad694e653378d0eb
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