Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step cove...

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Autores principales:	Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo
Formato:	article
Lenguaje:	EN
Publicado:	SpringerOpen 2021
Materias:	ALD Micro-LED Passivation VCSEL Reliability Materials of engineering and construction. Mechanics of materials TA401-492
Acceso en línea:	https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2
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id	oai:doaj.org-article:66fda989a7bd4adcb7b64c7c58c6cab2
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spelling	oai:doaj.org-article:66fda989a7bd4adcb7b64c7c58c6cab22021-11-21T12:39:48ZAdvanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs10.1186/s11671-021-03623-x1556-276Xhttps://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab22021-11-01T00:00:00Zhttps://doi.org/10.1186/s11671-021-03623-xhttps://doaj.org/toc/1556-276XAbstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.Yen-Wei YehSu-Hui LinTsung-Chi HsuShouqiang LaiPo-Tsung LeeShui-Yang LienDong-Sing WuuGuisen LiZhong ChenTingzhu WuHao-Chung KuoSpringerOpenarticleALDMicro-LEDPassivationVCSELReliabilityMaterials of engineering and construction. Mechanics of materialsTA401-492ENNanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ALD Micro-LED Passivation VCSEL Reliability Materials of engineering and construction. Mechanics of materials TA401-492
spellingShingle	ALD Micro-LED Passivation VCSEL Reliability Materials of engineering and construction. Mechanics of materials TA401-492 Yen-Wei Yeh Su-Hui Lin Tsung-Chi Hsu Shouqiang Lai Po-Tsung Lee Shui-Yang Lien Dong-Sing Wuu Guisen Li Zhong Chen Tingzhu Wu Hao-Chung Kuo Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
description	Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability.
format	article
author	Yen-Wei Yeh Su-Hui Lin Tsung-Chi Hsu Shouqiang Lai Po-Tsung Lee Shui-Yang Lien Dong-Sing Wuu Guisen Li Zhong Chen Tingzhu Wu Hao-Chung Kuo
author_facet	Yen-Wei Yeh Su-Hui Lin Tsung-Chi Hsu Shouqiang Lai Po-Tsung Lee Shui-Yang Lien Dong-Sing Wuu Guisen Li Zhong Chen Tingzhu Wu Hao-Chung Kuo
author_sort	Yen-Wei Yeh
title	Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_short	Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_full	Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_fullStr	Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_full_unstemmed	Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs
title_sort	advanced atomic layer deposition technologies for micro-leds and vcsels
publisher	SpringerOpen
publishDate	2021
url	https://doaj.org/article/66fda989a7bd4adcb7b64c7c58c6cab2
work_keys_str_mv	AT yenweiyeh advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT suhuilin advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT tsungchihsu advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT shouqianglai advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT potsunglee advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT shuiyanglien advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT dongsingwuu advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT guisenli advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT zhongchen advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT tingzhuwu advancedatomiclayerdepositiontechnologiesformicroledsandvcsels AT haochungkuo advancedatomiclayerdepositiontechnologiesformicroledsandvcsels
_version_	1718418887655030784

Advanced Atomic Layer Deposition Technologies for Micro-LEDs and VCSELs

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