Anisotropic etching of graphite and graphene in a remote hydrogen plasma

Nanofabrication: remote etching of graphene on hBN is highly anisotropic Etching of graphite with hydrogen plasma gives rise to two distinct etching regimes, governed by the degree of direct plasma exposure. A team led by D. M. Zumbühl at the University of Basel investigated the interplay between gr...

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Autores principales:	D. Hug, S. Zihlmann, M. K. Rehmann, Y. B. Kalyoncu, T. N. Camenzind, L. Marot, K. Watanabe, T. Taniguchi, D. M. Zumbühl
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/6716f4d3bc44416793f3e688bdacf5f5
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spelling	oai:doaj.org-article:6716f4d3bc44416793f3e688bdacf5f52021-12-02T14:22:14ZAnisotropic etching of graphite and graphene in a remote hydrogen plasma10.1038/s41699-017-0021-72397-7132https://doaj.org/article/6716f4d3bc44416793f3e688bdacf5f52017-07-01T00:00:00Zhttps://doi.org/10.1038/s41699-017-0021-7https://doaj.org/toc/2397-7132Nanofabrication: remote etching of graphene on hBN is highly anisotropic Etching of graphite with hydrogen plasma gives rise to two distinct etching regimes, governed by the degree of direct plasma exposure. A team led by D. M. Zumbühl at the University of Basel investigated the interplay between graphite exposure to pure hydrogen plasma and the resulting etching features. When the sample surface is in direct contact with the plasma, a defect-rich etching regime occurs, resulting in the formation of etch pits with variable size. However, when graphite is away from the plasma source, a remote anisotropic etching takes place, giving rise to regular hexagons originating from localized defects and edges. In the latter regime, the authors found that in the case of graphene, isotropic etching is obtained using SiO2 as substrate, whereas highly anisotropic etching occurs when graphene is placed on hBN.D. HugS. ZihlmannM. K. RehmannY. B. KalyoncuT. N. CamenzindL. MarotK. WatanabeT. TaniguchiD. M. ZumbühlNature PortfolioarticleMaterials of engineering and construction. Mechanics of materialsTA401-492ChemistryQD1-999ENnpj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-6 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999
spellingShingle	Materials of engineering and construction. Mechanics of materials TA401-492 Chemistry QD1-999 D. Hug S. Zihlmann M. K. Rehmann Y. B. Kalyoncu T. N. Camenzind L. Marot K. Watanabe T. Taniguchi D. M. Zumbühl Anisotropic etching of graphite and graphene in a remote hydrogen plasma
description	Nanofabrication: remote etching of graphene on hBN is highly anisotropic Etching of graphite with hydrogen plasma gives rise to two distinct etching regimes, governed by the degree of direct plasma exposure. A team led by D. M. Zumbühl at the University of Basel investigated the interplay between graphite exposure to pure hydrogen plasma and the resulting etching features. When the sample surface is in direct contact with the plasma, a defect-rich etching regime occurs, resulting in the formation of etch pits with variable size. However, when graphite is away from the plasma source, a remote anisotropic etching takes place, giving rise to regular hexagons originating from localized defects and edges. In the latter regime, the authors found that in the case of graphene, isotropic etching is obtained using SiO2 as substrate, whereas highly anisotropic etching occurs when graphene is placed on hBN.
format	article
author	D. Hug S. Zihlmann M. K. Rehmann Y. B. Kalyoncu T. N. Camenzind L. Marot K. Watanabe T. Taniguchi D. M. Zumbühl
author_facet	D. Hug S. Zihlmann M. K. Rehmann Y. B. Kalyoncu T. N. Camenzind L. Marot K. Watanabe T. Taniguchi D. M. Zumbühl
author_sort	D. Hug
title	Anisotropic etching of graphite and graphene in a remote hydrogen plasma
title_short	Anisotropic etching of graphite and graphene in a remote hydrogen plasma
title_full	Anisotropic etching of graphite and graphene in a remote hydrogen plasma
title_fullStr	Anisotropic etching of graphite and graphene in a remote hydrogen plasma
title_full_unstemmed	Anisotropic etching of graphite and graphene in a remote hydrogen plasma
title_sort	anisotropic etching of graphite and graphene in a remote hydrogen plasma
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/6716f4d3bc44416793f3e688bdacf5f5
work_keys_str_mv	AT dhug anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT szihlmann anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT mkrehmann anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT ybkalyoncu anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT tncamenzind anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT lmarot anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT kwatanabe anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT ttaniguchi anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma AT dmzumbuhl anisotropicetchingofgraphiteandgrapheneinaremotehydrogenplasma
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Anisotropic etching of graphite and graphene in a remote hydrogen plasma

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