Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.

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Autores principales: Zhongnan Xi, Jieji Ruan, Chen Li, Chunyan Zheng, Zheng Wen, Jiyan Dai, Aidong Li, Di Wu
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2017
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Acceso en línea:https://doaj.org/article/6868ba58c93b4267b01f63813991fc0d
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