Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.

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Autores principales:	Zhongnan Xi, Jieji Ruan, Chen Li, Chunyan Zheng, Zheng Wen, Jiyan Dai, Aidong Li, Di Wu
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/6868ba58c93b4267b01f63813991fc0d
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spelling	oai:doaj.org-article:6868ba58c93b4267b01f63813991fc0d2021-12-02T17:06:08ZGiant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier10.1038/ncomms152172041-1723https://doaj.org/article/6868ba58c93b4267b01f63813991fc0d2017-05-01T00:00:00Zhttps://doi.org/10.1038/ncomms15217https://doaj.org/toc/2041-1723Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.Zhongnan XiJieji RuanChen LiChunyan ZhengZheng WenJiyan DaiAidong LiDi WuNature PortfolioarticleScienceQENNature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Zhongnan Xi Jieji Ruan Chen Li Chunyan Zheng Zheng Wen Jiyan Dai Aidong Li Di Wu Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
description	Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.
format	article
author	Zhongnan Xi Jieji Ruan Chen Li Chunyan Zheng Zheng Wen Jiyan Dai Aidong Li Di Wu
author_facet	Zhongnan Xi Jieji Ruan Chen Li Chunyan Zheng Zheng Wen Jiyan Dai Aidong Li Di Wu
author_sort	Zhongnan Xi
title	Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
title_short	Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
title_full	Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
title_fullStr	Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
title_full_unstemmed	Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
title_sort	giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the schottky barrier
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/6868ba58c93b4267b01f63813991fc0d
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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

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