Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier
Alternative non-volatile memory designs are needed as the scaling of flash-based memories reaches its physical limits. By careful engineering, Xiet al. achieve ON/OFF ratios as great as 6.0 × 106in ferroelectric tunnel junction devices making them comparable to commercial flash memories.
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| Autores principales: | , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6868ba58c93b4267b01f63813991fc0d |
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