In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

Dirac cone surface states rectify an ultralow dissipative spin and charge current, but it is yet to be confirmed in devices. Here, Tuet al. observe p-type electrical transport on one half surface and n-type on the other in Bi2−xSbxTe3−ySeythin films, realizing a topological p-n junction.

Guardado en:
Detalles Bibliográficos
Autores principales: Ngoc Han Tu, Yoichi Tanabe, Yosuke Satake, Khuong Kim Huynh, Katsumi Tanigaki
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2016
Materias:
Q
Acceso en línea:https://doaj.org/article/68db658975f64b8e984de1dd2fbbec62
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!