Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disad...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, Filippo Giannazzo
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	ALD high-κ 2D materials graphene MoS<sub>2</sub> substrate effect Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
Acceso en línea:	https://doaj.org/article/69690cf09bd44f228ad8bb72277bc293
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:69690cf09bd44f228ad8bb72277bc293
record_format	dspace
spelling	oai:doaj.org-article:69690cf09bd44f228ad8bb72277bc2932021-11-25T16:43:25ZSubstrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials10.3390/app1122110522076-3417https://doaj.org/article/69690cf09bd44f228ad8bb72277bc2932021-11-01T00:00:00Zhttps://www.mdpi.com/2076-3417/11/22/11052https://doaj.org/toc/2076-3417Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> both on monolayer (1 L) graphene and MoS<sub>2</sub>. Similarly, uniform ALD growth of Al<sub>2</sub>O<sub>3</sub> on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS<sub>2</sub>. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.Emanuela SchiliròRaffaella Lo NigroFabrizio RoccaforteFilippo GiannazzoMDPI AGarticleALDhigh-κ2D materialsgrapheneMoS<sub>2</sub>substrate effectTechnologyTEngineering (General). Civil engineering (General)TA1-2040Biology (General)QH301-705.5PhysicsQC1-999ChemistryQD1-999ENApplied Sciences, Vol 11, Iss 11052, p 11052 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	ALD high-κ 2D materials graphene MoS<sub>2</sub> substrate effect Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999
spellingShingle	ALD high-κ 2D materials graphene MoS<sub>2</sub> substrate effect Technology T Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 Emanuela Schilirò Raffaella Lo Nigro Fabrizio Roccaforte Filippo Giannazzo Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
description	Atomic layer deposition (ALD) of high-κ dielectrics on two-dimensional (2D) materials (including graphene and transition metal dichalcogenides) still represents a challenge due to the lack of out-of-plane bonds on the pristine surfaces of 2D materials, thus making the nucleation process highly disadvantaged. The typical methods to promote the nucleation (i.e., the predeposition of seed layers or the surface activation via chemical treatments) certainly improve the ALD growth but can affect, to some extent, the electronic properties of 2D materials and the interface with high-κ dielectrics. Hence, direct ALD on 2D materials without seed and functionalization layers remains highly desirable. In this context, a crucial role can be played by the interaction with the substrate supporting the 2D membrane. In particular, metallic substrates such as copper or gold have been found to enhance the ALD nucleation of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> both on monolayer (1 L) graphene and MoS<sub>2</sub>. Similarly, uniform ALD growth of Al<sub>2</sub>O<sub>3</sub> on the surface of 1 L epitaxial graphene (EG) on SiC (0001) has been ascribed to the peculiar EG/SiC interface properties. This review provides a detailed discussion of the substrate-driven ALD growth of high-κ dielectrics on 2D materials, mainly on graphene and MoS<sub>2</sub>. The nucleation mechanism and the influence of the ALD parameters (namely the ALD temperature and cycle number) on the coverage as well as the structural and electrical properties of the deposited high-κ thin films are described. Finally, the open challenges for applications are discussed.
format	article
author	Emanuela Schilirò Raffaella Lo Nigro Fabrizio Roccaforte Filippo Giannazzo
author_facet	Emanuela Schilirò Raffaella Lo Nigro Fabrizio Roccaforte Filippo Giannazzo
author_sort	Emanuela Schilirò
title	Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
title_short	Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
title_full	Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
title_fullStr	Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
title_full_unstemmed	Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials
title_sort	substrate-driven atomic layer deposition of high-κ dielectrics on 2d materials
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/69690cf09bd44f228ad8bb72277bc293
work_keys_str_mv	AT emanuelaschiliro substratedrivenatomiclayerdepositionofhighkdielectricson2dmaterials AT raffaellalonigro substratedrivenatomiclayerdepositionofhighkdielectricson2dmaterials AT fabrizioroccaforte substratedrivenatomiclayerdepositionofhighkdielectricson2dmaterials AT filippogiannazzo substratedrivenatomiclayerdepositionofhighkdielectricson2dmaterials
_version_	1718413023420350464

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Ejemplares similares