Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Abstract Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase...

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Autores principales:	Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2017
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6af062edf51245c6a02c3acae7da9630
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spelling	oai:doaj.org-article:6af062edf51245c6a02c3acae7da96302021-12-02T15:06:12ZFlexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE10.1038/s41598-017-00865-72045-2322https://doaj.org/article/6af062edf51245c6a02c3acae7da96302017-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-017-00865-7https://doaj.org/toc/2045-2322Abstract Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.Xin LiMatthew B. JordanTaha AyariSuresh SundaramYoussef El GmiliSaiful AlamMuhbub AlamGilles PatriarchePaul L. VossJean Paul SalvestriniAbdallah OugazzadenNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Xin Li Matthew B. Jordan Taha Ayari Suresh Sundaram Youssef El Gmili Saiful Alam Muhbub Alam Gilles Patriarche Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
description	Abstract Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.
format	article
author	Xin Li Matthew B. Jordan Taha Ayari Suresh Sundaram Youssef El Gmili Saiful Alam Muhbub Alam Gilles Patriarche Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden
author_facet	Xin Li Matthew B. Jordan Taha Ayari Suresh Sundaram Youssef El Gmili Saiful Alam Muhbub Alam Gilles Patriarche Paul L. Voss Jean Paul Salvestrini Abdallah Ougazzaden
author_sort	Xin Li
title	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
title_short	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
title_full	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
title_fullStr	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
title_full_unstemmed	Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
title_sort	flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by movpe
publisher	Nature Portfolio
publishDate	2017
url	https://doaj.org/article/6af062edf51245c6a02c3acae7da9630
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Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

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