Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE
Abstract Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase...
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| Autores principales: | , , , , , , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2017
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6af062edf51245c6a02c3acae7da9630 |
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