Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions

Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four...

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Autores principales: Jhen-Yong Hong, Chen-Feng Hung, Kui-Hon Ou Yang, Kuan-Chia Chiu, Dah-Chin Ling, Wen-Chung Chiang, Minn-Tsong Lin
Formato: article
Lenguaje:EN
Publicado: Nature Portfolio 2021
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Acceso en línea:https://doaj.org/article/6af67625cc3e49e598e058b88d433a81
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