Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions
Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four...
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Nature Portfolio
2021
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oai:doaj.org-article:6af67625cc3e49e598e058b88d433a812021-12-02T13:17:49ZElectrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions10.1038/s41598-021-84749-x2045-2322https://doaj.org/article/6af67625cc3e49e598e058b88d433a812021-03-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-84749-xhttps://doaj.org/toc/2045-2322Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the $$\text{AlO}_{x}$$ AlO x layer. The role played by oxygen vacancies in $$\text{AlO}_{x}$$ AlO x is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single $$\text{AlO}_{x}$$ AlO x -based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices.Jhen-Yong HongChen-Feng HungKui-Hon Ou YangKuan-Chia ChiuDah-Chin LingWen-Chung ChiangMinn-Tsong LinNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-7 (2021) |
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Medicine R Science Q Jhen-Yong Hong Chen-Feng Hung Kui-Hon Ou Yang Kuan-Chia Chiu Dah-Chin Ling Wen-Chung Chiang Minn-Tsong Lin Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| description |
Abstract We report spin-dependent transport properties and I–V hysteresis characteristics in an $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junction (MTJ). The bipolar resistive switching and the magnetoresistances measured at high resistance state (HRS) and low resistance state (LRS) yield four distinctive resistive states in a single device. The temperature dependence of resistance at LRS suggests that the resistive switching is not triggered by the metal filaments within the $$\text{AlO}_{x}$$ AlO x layer. The role played by oxygen vacancies in $$\text{AlO}_{x}$$ AlO x is the key to determine the resistive state. Our study reveals the possibility of controlling the multiple resistive states in a single $$\text{AlO}_{x}$$ AlO x -based MTJ by the interplay of both electric and magnetic fields, thus providing potential applications for future multi-bit memory devices. |
| format |
article |
| author |
Jhen-Yong Hong Chen-Feng Hung Kui-Hon Ou Yang Kuan-Chia Chiu Dah-Chin Ling Wen-Chung Chiang Minn-Tsong Lin |
| author_facet |
Jhen-Yong Hong Chen-Feng Hung Kui-Hon Ou Yang Kuan-Chia Chiu Dah-Chin Ling Wen-Chung Chiang Minn-Tsong Lin |
| author_sort |
Jhen-Yong Hong |
| title |
Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| title_short |
Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| title_full |
Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| title_fullStr |
Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| title_full_unstemmed |
Electrically programmable magnetoresistance in $$\text{AlO}_{x}$$ AlO x -based magnetic tunnel junctions |
| title_sort |
electrically programmable magnetoresistance in $$\text{alo}_{x}$$ alo x -based magnetic tunnel junctions |
| publisher |
Nature Portfolio |
| publishDate |
2021 |
| url |
https://doaj.org/article/6af67625cc3e49e598e058b88d433a81 |
| work_keys_str_mv |
AT jhenyonghong electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT chenfenghung electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT kuihonouyang electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT kuanchiachiu electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT dahchinling electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT wenchungchiang electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions AT minntsonglin electricallyprogrammablemagnetoresistanceintextaloxaloxbasedmagnetictunneljunctions |
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1718393336948064256 |