Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrate...

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Autores principales: Jo-Han Hung, Pei-Yu Wang, Yu-Chen Lo, Chih-Wen Yang, Bing-Yue Tsui, Chia-Hsiang Yang
Formato: article
Lenguaje:EN
Publicado: IEEE 2020
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Acceso en línea:https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1
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