Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrate...

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Autores principales:	Jo-Han Hung, Pei-Yu Wang, Yu-Chen Lo, Chih-Wen Yang, Bing-Yue Tsui, Chia-Hsiang Yang
Formato:	article
Lenguaje:	EN
Publicado:	IEEE 2020
Materias:	Band-to-band (BTBT) tunneling epitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET) heterogeneous integration low-energy logic SiGe low-bandgap material Computer engineering. Computer hardware TK7885-7895
Acceso en línea:	https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1
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spelling	oai:doaj.org-article:6b783c98f90e4882a39c54f221a86dd12021-11-19T00:07:08ZDigital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics2329-923110.1109/JXCDC.2020.3032903https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd12020-01-01T00:00:00Zhttps://ieeexplore.ieee.org/document/9235560/https://doaj.org/toc/2329-9231The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrated that the SS and ON-state current can be improved without leakage current penalty through the usage of SiGe low-bandgap material in the epitaxial tunnel layer (ETL). ETL-TFET is highly compatible with the CMOS process, enabling heterogeneous integration of TFET and MOSFET in the same technology. In this work, the circuit performance of ETL-TFET and fully depleted SOI (FDSOI) MOSFET is evaluated and compared in terms of energy and delay metrics. By combining the advantages of TFET and MOSFET, heterogeneous pMOS-NTFET dynamic logic gates are proposed. The pMOS-NTFET-based logic gates demonstrate the lowest energy consumption than other realizations. Asynchronous datapath is leveraged to combat the timing variations in the ultralow-voltage region. A 20.9%–33.9% energy reduction is achieved compared with the conventional MOSFET counterpart.Jo-Han HungPei-Yu WangYu-Chen LoChih-Wen YangBing-Yue TsuiChia-Hsiang YangIEEEarticleBand-to-band (BTBT) tunnelingepitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET)heterogeneous integrationlow-energy logicSiGe low-bandgap materialComputer engineering. Computer hardwareTK7885-7895ENIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp 130-137 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Band-to-band (BTBT) tunneling epitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET) heterogeneous integration low-energy logic SiGe low-bandgap material Computer engineering. Computer hardware TK7885-7895
spellingShingle	Band-to-band (BTBT) tunneling epitaxial tunnel layer (ETL) tunnel field-effect transistor (TFET) heterogeneous integration low-energy logic SiGe low-bandgap material Computer engineering. Computer hardware TK7885-7895 Jo-Han Hung Pei-Yu Wang Yu-Chen Lo Chih-Wen Yang Bing-Yue Tsui Chia-Hsiang Yang Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
description	The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrated that the SS and ON-state current can be improved without leakage current penalty through the usage of SiGe low-bandgap material in the epitaxial tunnel layer (ETL). ETL-TFET is highly compatible with the CMOS process, enabling heterogeneous integration of TFET and MOSFET in the same technology. In this work, the circuit performance of ETL-TFET and fully depleted SOI (FDSOI) MOSFET is evaluated and compared in terms of energy and delay metrics. By combining the advantages of TFET and MOSFET, heterogeneous pMOS-NTFET dynamic logic gates are proposed. The pMOS-NTFET-based logic gates demonstrate the lowest energy consumption than other realizations. Asynchronous datapath is leveraged to combat the timing variations in the ultralow-voltage region. A 20.9%–33.9% energy reduction is achieved compared with the conventional MOSFET counterpart.
format	article
author	Jo-Han Hung Pei-Yu Wang Yu-Chen Lo Chih-Wen Yang Bing-Yue Tsui Chia-Hsiang Yang
author_facet	Jo-Han Hung Pei-Yu Wang Yu-Chen Lo Chih-Wen Yang Bing-Yue Tsui Chia-Hsiang Yang
author_sort	Jo-Han Hung
title	Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
title_short	Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
title_full	Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
title_fullStr	Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
title_full_unstemmed	Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
title_sort	digital logic and asynchronous datapath with heterogeneous tfet-mosfet structure for ultralow-energy electronics
publisher	IEEE
publishDate	2020
url	https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1
work_keys_str_mv	AT johanhung digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics AT peiyuwang digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics AT yuchenlo digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics AT chihwenyang digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics AT bingyuetsui digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics AT chiahsiangyang digitallogicandasynchronousdatapathwithheterogeneoustfetmosfetstructureforultralowenergyelectronics
_version_	1718420613501026304

Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics

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