Digital Logic and Asynchronous Datapath With Heterogeneous TFET-MOSFET Structure for Ultralow-Energy Electronics
The tunnel field-effect transistor (TFET) is a promising solution for high energy-efficient circuits. Based on the band-to-band tunneling (BTBT) condition, fast switching characteristic with a steep subthreshold swing (SS) in the ultralow-voltage operation is feasible. Our prior work has demonstrate...
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| Autores principales: | , , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
IEEE
2020
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6b783c98f90e4882a39c54f221a86dd1 |
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