Strain effects on polycrystalline germanium thin films

Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge lay...

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Autores principales:	Toshifumi Imajo, Takashi Suemasu, Kaoru Toko
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2021
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f
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spelling	oai:doaj.org-article:6be6c68941b4463b80afec4cd4a2e62f2021-12-02T18:03:15ZStrain effects on polycrystalline germanium thin films10.1038/s41598-021-87616-x2045-2322https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f2021-04-01T00:00:00Zhttps://doi.org/10.1038/s41598-021-87616-xhttps://doaj.org/toc/2045-2322Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.Toshifumi ImajoTakashi SuemasuKaoru TokoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 11, Iss 1, Pp 1-6 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Toshifumi Imajo Takashi Suemasu Kaoru Toko Strain effects on polycrystalline germanium thin films
description	Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge layers formed by solid-phase crystallization at 375 °C by modulating the substrate material. The strain of the Ge layers is in the range of approximately 0.5% (tensile) to -0.5% (compressive), which reflects both thermal expansion difference between Ge and substrate and phase transition of Ge from amorphous to crystalline. For both tensile and compressive strains, a large strain provides large crystal grains with sizes of approximately 10 μm owing to growth promotion. The potential barrier height of the grain boundary strongly depends on the strain and its direction. It is increased by tensile strain and decreased by compressive strain. These findings will be useful for the design of Ge-based thin-film devices on various materials for Internet-of-things technologies.
format	article
author	Toshifumi Imajo Takashi Suemasu Kaoru Toko
author_facet	Toshifumi Imajo Takashi Suemasu Kaoru Toko
author_sort	Toshifumi Imajo
title	Strain effects on polycrystalline germanium thin films
title_short	Strain effects on polycrystalline germanium thin films
title_full	Strain effects on polycrystalline germanium thin films
title_fullStr	Strain effects on polycrystalline germanium thin films
title_full_unstemmed	Strain effects on polycrystalline germanium thin films
title_sort	strain effects on polycrystalline germanium thin films
publisher	Nature Portfolio
publishDate	2021
url	https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f
work_keys_str_mv	AT toshifumiimajo straineffectsonpolycrystallinegermaniumthinfilms AT takashisuemasu straineffectsonpolycrystallinegermaniumthinfilms AT kaorutoko straineffectsonpolycrystallinegermaniumthinfilms
_version_	1718378757601886208

Strain effects on polycrystalline germanium thin films

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