Strain effects on polycrystalline germanium thin films
Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge lay...
Enregistré dans:
Auteurs principaux: | Toshifumi Imajo, Takashi Suemasu, Kaoru Toko |
---|---|
Format: | article |
Langue: | EN |
Publié: |
Nature Portfolio
2021
|
Sujets: | |
Accès en ligne: | https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f |
Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
Documents similaires
-
Grain size dependent photoresponsivity in GaAs films formed on glass with Ge seed layers
par: T. Nishida, et autres
Publié: (2021) -
Effects of Crystallinity on the Electrical Characteristics of Counter-Doped Polycrystalline Germanium Thin-Film Transistor via Continuous-Wave Laser Crystallization
par: Yi-Shao Li, et autres
Publié: (2019) -
Grain boundary anisotropy on nano-polycrystalline magnetic thin films
par: Jose D. Agudelo-Giraldo, et autres
Publié: (2020) -
High-Performance Photodiode-Type Photodetectors Based on Polycrystalline Formamidinium Lead Iodide Perovskite Thin Films
par: Meng Zhang, et autres
Publié: (2018) -
Lasing in strained germanium microbridges
par: F. T. Armand Pilon, et autres
Publié: (2019)