Strain effects on polycrystalline germanium thin films

Abstract Polycrystalline Ge thin films have attracted increasing attention because their hole mobilities exceed those of single-crystal Si wafers, while the process temperature is low. In this study, we investigate the strain effects on the crystal and electrical properties of polycrystalline Ge lay...

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Auteurs principaux: Toshifumi Imajo, Takashi Suemasu, Kaoru Toko
Format: article
Langue:EN
Publié: Nature Portfolio 2021
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Accès en ligne:https://doaj.org/article/6be6c68941b4463b80afec4cd4a2e62f
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