A Curvature Compensation Technique for Low-Voltage Bandgap Reference

Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient cu...

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Autores principales: Jie Shen, Houpeng Chen, Shenglan Ni, Zhitang Song
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5
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