A Curvature Compensation Technique for Low-Voltage Bandgap Reference
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient cu...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5 |
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