A Curvature Compensation Technique for Low-Voltage Bandgap Reference
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient cu...
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5 |
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| Sumario: | Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of V<sub>BE</sub>. The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10<sup>−6</sup>/°C to 5.71 × 10<sup>−6</sup>/°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10<sup>−6</sup>/°C to 5.22 × 10<sup>−6</sup>/°C. |
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