A Curvature Compensation Technique for Low-Voltage Bandgap Reference

Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient cu...

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Autores principales:	Jie Shen, Houpeng Chen, Shenglan Ni, Zhitang Song
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	bandgap reference curvature compensation nonlinear current Technology T
Acceso en línea:	https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5
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id	oai:doaj.org-article:6c7ced598d65400391c5bce6b45040f5
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spelling	oai:doaj.org-article:6c7ced598d65400391c5bce6b45040f52021-11-11T15:57:50ZA Curvature Compensation Technique for Low-Voltage Bandgap Reference10.3390/en142171931996-1073https://doaj.org/article/6c7ced598d65400391c5bce6b45040f52021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1073/14/21/7193https://doaj.org/toc/1996-1073Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of V<sub>BE</sub>. The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10<sup>−6</sup>/°C to 5.71 × 10<sup>−6</sup>/°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10<sup>−6</sup>/°C to 5.22 × 10<sup>−6</sup>/°C.Jie ShenHoupeng ChenShenglan NiZhitang SongMDPI AGarticlebandgap referencecurvature compensationnonlinear currentTechnologyTENEnergies, Vol 14, Iss 7193, p 7193 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	bandgap reference curvature compensation nonlinear current Technology T
spellingShingle	bandgap reference curvature compensation nonlinear current Technology T Jie Shen Houpeng Chen Shenglan Ni Zhitang Song A Curvature Compensation Technique for Low-Voltage Bandgap Reference
description	Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply. By adding IPTAT (positive temperature coefficient current) and ICTAT (negative temperature coefficient current) to the output resistance, the first-order compensation bandgap voltages can be obtained. Meanwhile, the third high-order compensation current is also superimposed on the same resistance. We make use of the collector current of the bipolar transistor to compensate for the nonlinear term of V<sub>BE</sub>. The simulation results show that TC (temperature coefficient) of the first circuit reference could be reduced from 29.1 × 10<sup>−6</sup>/°C to 5.71 × 10<sup>−6</sup>/°C over the temperature range of −25 to 125 °C after temperature compensation. The second one could be reduced from 17 × 10<sup>−6</sup>/°C to 5.22 × 10<sup>−6</sup>/°C.
format	article
author	Jie Shen Houpeng Chen Shenglan Ni Zhitang Song
author_facet	Jie Shen Houpeng Chen Shenglan Ni Zhitang Song
author_sort	Jie Shen
title	A Curvature Compensation Technique for Low-Voltage Bandgap Reference
title_short	A Curvature Compensation Technique for Low-Voltage Bandgap Reference
title_full	A Curvature Compensation Technique for Low-Voltage Bandgap Reference
title_fullStr	A Curvature Compensation Technique for Low-Voltage Bandgap Reference
title_full_unstemmed	A Curvature Compensation Technique for Low-Voltage Bandgap Reference
title_sort	curvature compensation technique for low-voltage bandgap reference
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/6c7ced598d65400391c5bce6b45040f5
work_keys_str_mv	AT jieshen acurvaturecompensationtechniqueforlowvoltagebandgapreference AT houpengchen acurvaturecompensationtechniqueforlowvoltagebandgapreference AT shenglanni acurvaturecompensationtechniqueforlowvoltagebandgapreference AT zhitangsong acurvaturecompensationtechniqueforlowvoltagebandgapreference AT jieshen curvaturecompensationtechniqueforlowvoltagebandgapreference AT houpengchen curvaturecompensationtechniqueforlowvoltagebandgapreference AT shenglanni curvaturecompensationtechniqueforlowvoltagebandgapreference AT zhitangsong curvaturecompensationtechniqueforlowvoltagebandgapreference
_version_	1718432419791503360

A Curvature Compensation Technique for Low-Voltage Bandgap Reference

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