The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin...
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MDPI AG
2021
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oai:doaj.org-article:6d56cc3c504546c695985081286ebb072021-11-25T18:14:11ZThe ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes10.3390/ma142268591996-1944https://doaj.org/article/6d56cc3c504546c695985081286ebb072021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6859https://doaj.org/toc/1996-1944The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In<sub>2</sub>O<sub>3</sub>) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In<sub>2</sub>O<sub>3</sub> content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In<sub>2</sub>O<sub>3</sub>) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.Akhmed AkhmedovAslan AbduevEldar MurlievAbil AsvarovArsen MuslimovVladimir KanevskyMDPI AGarticletransparent conductive oxide (TCO)ZnOIn<sub>2</sub>O<sub>3</sub>spark plasma sintering (SPS)magnetron sputteringceramic targetTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6859, p 6859 (2021) |
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transparent conductive oxide (TCO) ZnO In<sub>2</sub>O<sub>3</sub> spark plasma sintering (SPS) magnetron sputtering ceramic target Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 |
spellingShingle |
transparent conductive oxide (TCO) ZnO In<sub>2</sub>O<sub>3</sub> spark plasma sintering (SPS) magnetron sputtering ceramic target Technology T Electrical engineering. Electronics. Nuclear engineering TK1-9971 Engineering (General). Civil engineering (General) TA1-2040 Microscopy QH201-278.5 Descriptive and experimental mechanics QC120-168.85 Akhmed Akhmedov Aslan Abduev Eldar Murliev Abil Asvarov Arsen Muslimov Vladimir Kanevsky The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
description |
The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In<sub>2</sub>O<sub>3</sub>) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In<sub>2</sub>O<sub>3</sub> content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In<sub>2</sub>O<sub>3</sub>) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO. |
format |
article |
author |
Akhmed Akhmedov Aslan Abduev Eldar Murliev Abil Asvarov Arsen Muslimov Vladimir Kanevsky |
author_facet |
Akhmed Akhmedov Aslan Abduev Eldar Murliev Abil Asvarov Arsen Muslimov Vladimir Kanevsky |
author_sort |
Akhmed Akhmedov |
title |
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
title_short |
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
title_full |
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
title_fullStr |
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
title_full_unstemmed |
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes |
title_sort |
zno-in<sub>2</sub>o<sub>3</sub> oxide system as a material for low-temperature deposition of transparent electrodes |
publisher |
MDPI AG |
publishDate |
2021 |
url |
https://doaj.org/article/6d56cc3c504546c695985081286ebb07 |
work_keys_str_mv |
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