The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin...

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Autores principales: Akhmed Akhmedov, Aslan Abduev, Eldar Murliev, Abil Asvarov, Arsen Muslimov, Vladimir Kanevsky
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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spelling oai:doaj.org-article:6d56cc3c504546c695985081286ebb072021-11-25T18:14:11ZThe ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes10.3390/ma142268591996-1944https://doaj.org/article/6d56cc3c504546c695985081286ebb072021-11-01T00:00:00Zhttps://www.mdpi.com/1996-1944/14/22/6859https://doaj.org/toc/1996-1944The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In<sub>2</sub>O<sub>3</sub>) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In<sub>2</sub>O<sub>3</sub> content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In<sub>2</sub>O<sub>3</sub>) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.Akhmed AkhmedovAslan AbduevEldar MurlievAbil AsvarovArsen MuslimovVladimir KanevskyMDPI AGarticletransparent conductive oxide (TCO)ZnOIn<sub>2</sub>O<sub>3</sub>spark plasma sintering (SPS)magnetron sputteringceramic targetTechnologyTElectrical engineering. Electronics. Nuclear engineeringTK1-9971Engineering (General). Civil engineering (General)TA1-2040MicroscopyQH201-278.5Descriptive and experimental mechanicsQC120-168.85ENMaterials, Vol 14, Iss 6859, p 6859 (2021)
institution DOAJ
collection DOAJ
language EN
topic transparent conductive oxide (TCO)
ZnO
In<sub>2</sub>O<sub>3</sub>
spark plasma sintering (SPS)
magnetron sputtering
ceramic target
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
spellingShingle transparent conductive oxide (TCO)
ZnO
In<sub>2</sub>O<sub>3</sub>
spark plasma sintering (SPS)
magnetron sputtering
ceramic target
Technology
T
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Engineering (General). Civil engineering (General)
TA1-2040
Microscopy
QH201-278.5
Descriptive and experimental mechanics
QC120-168.85
Akhmed Akhmedov
Aslan Abduev
Eldar Murliev
Abil Asvarov
Arsen Muslimov
Vladimir Kanevsky
The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
description The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In<sub>2</sub>O<sub>3</sub>) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In<sub>2</sub>O<sub>3</sub> content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In<sub>2</sub>O<sub>3</sub>) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.
format article
author Akhmed Akhmedov
Aslan Abduev
Eldar Murliev
Abil Asvarov
Arsen Muslimov
Vladimir Kanevsky
author_facet Akhmed Akhmedov
Aslan Abduev
Eldar Murliev
Abil Asvarov
Arsen Muslimov
Vladimir Kanevsky
author_sort Akhmed Akhmedov
title The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
title_short The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
title_full The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
title_fullStr The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
title_full_unstemmed The ZnO-In<sub>2</sub>O<sub>3</sub> Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes
title_sort zno-in<sub>2</sub>o<sub>3</sub> oxide system as a material for low-temperature deposition of transparent electrodes
publisher MDPI AG
publishDate 2021
url https://doaj.org/article/6d56cc3c504546c695985081286ebb07
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