Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT
A differential analysis of electrical attributes, including the temperature profile and trapping phenomena is introduced using a device analytical spatial electrical model. The resultant current difference caused by the applied voltage variation is divided into isothermal and thermal sections, corre...
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| Auteurs principaux: | , , , , |
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| Format: | article |
| Langue: | EN |
| Publié: |
MDPI AG
2021
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| Sujets: | |
| Accès en ligne: | https://doaj.org/article/6f30571578b245f9865b2cd510c7bb90 |
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