Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT
A differential analysis of electrical attributes, including the temperature profile and trapping phenomena is introduced using a device analytical spatial electrical model. The resultant current difference caused by the applied voltage variation is divided into isothermal and thermal sections, corre...
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| Autores principales: | , , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
MDPI AG
2021
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/6f30571578b245f9865b2cd510c7bb90 |
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