Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also displa...

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Autores principales: Young Pyo Jeon, Yongbin Bang, Hak Ji Lee, Eun Jung Lee, Young Joon Yoo, Sang Yoon Park
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
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Acceso en línea:https://doaj.org/article/708352a3c1664026be4cb20b398bbc3d
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