Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also displa...

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Autores principales:	Young Pyo Jeon, Yongbin Bang, Hak Ji Lee, Eun Jung Lee, Young Joon Yoo, Sang Yoon Park
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	memristive device short-term memory long-term memory lithium plasticity Electronics TK7800-8360
Acceso en línea:	https://doaj.org/article/708352a3c1664026be4cb20b398bbc3d
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id	oai:doaj.org-article:708352a3c1664026be4cb20b398bbc3d
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spelling	oai:doaj.org-article:708352a3c1664026be4cb20b398bbc3d2021-11-11T15:36:29ZShort-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium10.3390/electronics102125642079-9292https://doaj.org/article/708352a3c1664026be4cb20b398bbc3d2021-10-01T00:00:00Zhttps://www.mdpi.com/2079-9292/10/21/2564https://doaj.org/toc/2079-9292Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.Young Pyo JeonYongbin BangHak Ji LeeEun Jung LeeYoung Joon YooSang Yoon ParkMDPI AGarticlememristive deviceshort-term memorylong-term memorylithiumplasticityElectronicsTK7800-8360ENElectronics, Vol 10, Iss 2564, p 2564 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	memristive device short-term memory long-term memory lithium plasticity Electronics TK7800-8360
spellingShingle	memristive device short-term memory long-term memory lithium plasticity Electronics TK7800-8360 Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
description	Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption.
format	article
author	Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park
author_facet	Young Pyo Jeon Yongbin Bang Hak Ji Lee Eun Jung Lee Young Joon Yoo Sang Yoon Park
author_sort	Young Pyo Jeon
title	Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
title_short	Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
title_full	Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
title_fullStr	Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
title_full_unstemmed	Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
title_sort	short-term to long-term plasticity transition behavior of memristive devices with low power consumption via facilitating ionic drift of implanted lithium
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/708352a3c1664026be4cb20b398bbc3d
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Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

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