Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium

Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also displa...

Description complète

Enregistré dans:
Détails bibliographiques
Auteurs principaux: Young Pyo Jeon, Yongbin Bang, Hak Ji Lee, Eun Jung Lee, Young Joon Yoo, Sang Yoon Park
Format: article
Langue:EN
Publié: MDPI AG 2021
Sujets:
Accès en ligne:https://doaj.org/article/708352a3c1664026be4cb20b398bbc3d
Tags: Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!