Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanc...

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Autores principales: Gunawan Witjaksono, Muhammad Junaid, Mohd Haris Khir, Zaka Ullah, Nelson Tansu, Mohamed Shuaib Bin Mohamed Saheed, Muhammad Aadil Siddiqui, Saeed S. Ba-Hashwan, Abdullah Saleh Algamili, Saeed Ahmed Magsi, Muhammad Zubair Aslam, Rab Nawaz
Formato: article
Lenguaje:EN
Publicado: MDPI AG 2021
Materias:
optical bandgap tunning
optoelectronic
nitrogen-doped reduced graphene oxide
conductivity
Organic chemistry
QD241-441
Acceso en línea:https://doaj.org/article/713cc921eb8d4804b686d9df10d5d125
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https://doaj.org/article/713cc921eb8d4804b686d9df10d5d125

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