Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanc...

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Autores principales:	Gunawan Witjaksono, Muhammad Junaid, Mohd Haris Khir, Zaka Ullah, Nelson Tansu, Mohamed Shuaib Bin Mohamed Saheed, Muhammad Aadil Siddiqui, Saeed S. Ba-Hashwan, Abdullah Saleh Algamili, Saeed Ahmed Magsi, Muhammad Zubair Aslam, Rab Nawaz
Formato:	article
Lenguaje:	EN
Publicado:	MDPI AG 2021
Materias:	optical bandgap tunning optoelectronic nitrogen-doped reduced graphene oxide conductivity Organic chemistry QD241-441
Acceso en línea:	https://doaj.org/article/713cc921eb8d4804b686d9df10d5d125
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spelling	oai:doaj.org-article:713cc921eb8d4804b686d9df10d5d1252021-11-11T18:26:32ZEffect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide10.3390/molecules262164241420-3049https://doaj.org/article/713cc921eb8d4804b686d9df10d5d1252021-10-01T00:00:00Zhttps://www.mdpi.com/1420-3049/26/21/6424https://doaj.org/toc/1420-3049Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.Gunawan WitjaksonoMuhammad JunaidMohd Haris KhirZaka UllahNelson TansuMohamed Shuaib Bin Mohamed SaheedMuhammad Aadil SiddiquiSaeed S. Ba-HashwanAbdullah Saleh AlgamiliSaeed Ahmed MagsiMuhammad Zubair AslamRab NawazMDPI AGarticleoptical bandgap tunningoptoelectronicnitrogen-doped reduced graphene oxideconductivityOrganic chemistryQD241-441ENMolecules, Vol 26, Iss 6424, p 6424 (2021)
institution	DOAJ
collection	DOAJ
language	EN
topic	optical bandgap tunning optoelectronic nitrogen-doped reduced graphene oxide conductivity Organic chemistry QD241-441
spellingShingle	optical bandgap tunning optoelectronic nitrogen-doped reduced graphene oxide conductivity Organic chemistry QD241-441 Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
description	Graphene as a material for optoelectronic design applications has been significantly restricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.%. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect measurement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale.
format	article
author	Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz
author_facet	Gunawan Witjaksono Muhammad Junaid Mohd Haris Khir Zaka Ullah Nelson Tansu Mohamed Shuaib Bin Mohamed Saheed Muhammad Aadil Siddiqui Saeed S. Ba-Hashwan Abdullah Saleh Algamili Saeed Ahmed Magsi Muhammad Zubair Aslam Rab Nawaz
author_sort	Gunawan Witjaksono
title	Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
title_short	Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
title_full	Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
title_fullStr	Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
title_full_unstemmed	Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide
title_sort	effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
publisher	MDPI AG
publishDate	2021
url	https://doaj.org/article/713cc921eb8d4804b686d9df10d5d125
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Effect of Nitrogen Doping on the Optical Bandgap and Electrical Conductivity of Nitrogen-Doped Reduced Graphene Oxide

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