Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications. In this paper, the effects of Junction Field Effect Transistor (JFET) region width and JFET doping (JD) o...

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Bibliographic Details
Main Authors: Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang
Format: article
Language:EN
Published: IEEE 2020
Subjects:
SiC MOSFET
JFET width
JFET doping
short circuit
Electrical engineering. Electronics. Nuclear engineering
TK1-9971
Online Access:https://doaj.org/article/71ecac5e3fd54c4b87308cab2710b01c
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https://doaj.org/article/71ecac5e3fd54c4b87308cab2710b01c

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