Different JFET Designs on Conduction and Short-Circuit Capability for 3.3 kV Planar-Gate Silicon Carbide MOSFETs

Both large current capability and strong short-circuit (SC) ruggedness are necessary for 3.3 kV SiC MOSFETs to improve system efficiency and reduce costs in industrial and traction applications. In this paper, the effects of Junction Field Effect Transistor (JFET) region width and JFET doping (JD) o...

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Autores principales: Ximing Chen, Xuan Li, Yafei Wang, Hong Chen, Caineng Zhou, Chao Zhang, Chengzhan Li, Xiaochuan Deng, Yudong Wu, Bo Zang
Formato: article
Lenguaje:EN
Publicado: IEEE 2020
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Acceso en línea:https://doaj.org/article/71ecac5e3fd54c4b87308cab2710b01c
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