Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers
Photoelectrochemical etching of GaN in different solutions such as KOH, HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron microscopy cathodoluminescence analysis of the etched samples are presented.
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Formato: | article |
Lenguaje: | EN |
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D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
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Acceso en línea: | https://doaj.org/article/73c563e24d8a40a389880a4f73ef2ce8 |
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