Morphology study and cathodoluminescence microanalysis of photoelectrochemically etched GaN epilayers
Photoelectrochemical etching of GaN in different solutions such as KOH, HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron microscopy cathodoluminescence analysis of the etched samples are presented.
Enregistré dans:
| Auteur principal: | |
|---|---|
| Format: | article |
| Langue: | EN |
| Publié: |
D.Ghitu Institute of Electronic Engineering and Nanotechnologies
2005
|
| Sujets: | |
| Accès en ligne: | https://doaj.org/article/73c563e24d8a40a389880a4f73ef2ce8 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| Résumé: | Photoelectrochemical etching of GaN in different solutions such as KOH,
HF/H2O2/C2H5OH and oxalic acid was performed. The results of scanning electron
microscopy cathodoluminescence analysis of the etched samples are presented. |
|---|