CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Abstract This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricate...

Descripción completa

Guardado en:

Detalles Bibliográficos
Autores principales:	Shin-Yi Min, Won-Ju Cho
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2020
Materias:	Medicine R Science Q
Acceso en línea:	https://doaj.org/article/73c82aed11704c388acfb6091cbb502a
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

id	oai:doaj.org-article:73c82aed11704c388acfb6091cbb502a
record_format	dspace
spelling	oai:doaj.org-article:73c82aed11704c388acfb6091cbb502a2021-12-02T18:48:01ZCMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer10.1038/s41598-020-72684-22045-2322https://doaj.org/article/73c82aed11704c388acfb6091cbb502a2020-09-01T00:00:00Zhttps://doi.org/10.1038/s41598-020-72684-2https://doaj.org/toc/2045-2322Abstract This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.Shin-Yi MinWon-Ju ChoNature PortfolioarticleMedicineRScienceQENScientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
institution	DOAJ
collection	DOAJ
language	EN
topic	Medicine R Science Q
spellingShingle	Medicine R Science Q Shin-Yi Min Won-Ju Cho CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
description	Abstract This study proposes a hybrid electric double layer (EDL) with complementary metal-oxide semiconductor (CMOS) process compatibility by stacking a chitosan electrolyte and a Ta2O5 high-k dielectric thin film. Bio-inspired synaptic transistors with excellent electrical stability were fabricated using the proposed hybrid EDL for the gate dielectric layer. The Ta2O5 high-k dielectric layer with high chemical resistance, thermal stability, and mechanical strength enables CMOS-compatible patterning processes on biocompatible organic polymer chitosan electrolytes. This technique achieved ion-conduction from the chitosan electrolyte to the In-Ga-Zn oxide (IGZO) channel layer. The on/off current ratio, subthreshold voltage swing, and the field-effect mobility of the fabricated IGZO EDL transistors (EDLTs) exhibited excellent electrical properties of 1.80 × 107, 96 mV/dec, and 3.73 cm2/V·s, respectively. A resistor-loaded inverter was constructed by connecting an IGZO EDLT with a load resistor (400 MΩ) in series. This demonstrated good inverter action and responded to the square-wave input signals. Synaptic behaviours such as the hysteresis window and excitatory post-synaptic current (EPSC) variations were evaluated for different DC gate voltage sweep ranges and different AC gate spike stimuli, respectively. Therefore, the proposed organic–inorganic hybrid EDL is expected to be useful for implementing an extremely compact neural architecture system.
format	article
author	Shin-Yi Min Won-Ju Cho
author_facet	Shin-Yi Min Won-Ju Cho
author_sort	Shin-Yi Min
title	CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
title_short	CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
title_full	CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
title_fullStr	CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
title_full_unstemmed	CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer
title_sort	cmos-compatible synaptic transistor gated by chitosan electrolyte-ta2o5 hybrid electric double layer
publisher	Nature Portfolio
publishDate	2020
url	https://doaj.org/article/73c82aed11704c388acfb6091cbb502a
work_keys_str_mv	AT shinyimin cmoscompatiblesynaptictransistorgatedbychitosanelectrolyteta2o5hybridelectricdoublelayer AT wonjucho cmoscompatiblesynaptictransistorgatedbychitosanelectrolyteta2o5hybridelectricdoublelayer
_version_	1718377630840913920

CMOS-compatible synaptic transistor gated by chitosan electrolyte-Ta2O5 hybrid electric double layer

Ejemplares similares