Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.

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Auteurs principaux: Brian S. Y. Kim, Yasuyuki Hikita, Takeaki Yajima, Harold Y. Hwang
Format: article
Langue:EN
Publié: Nature Portfolio 2019
Sujets:
Q
Accès en ligne:https://doaj.org/article/74ea721343ef4cffb39fe57d98dc8c3f
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