Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.
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| Autores principales: | , , , |
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| Formato: | article |
| Lenguaje: | EN |
| Publicado: |
Nature Portfolio
2019
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| Materias: | |
| Acceso en línea: | https://doaj.org/article/74ea721343ef4cffb39fe57d98dc8c3f |
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