Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.

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Autores principales:	Brian S. Y. Kim, Yasuyuki Hikita, Takeaki Yajima, Harold Y. Hwang
Formato:	article
Lenguaje:	EN
Publicado:	Nature Portfolio 2019
Materias:	Science Q
Acceso en línea:	https://doaj.org/article/74ea721343ef4cffb39fe57d98dc8c3f
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spelling	oai:doaj.org-article:74ea721343ef4cffb39fe57d98dc8c3f2021-12-02T17:02:11ZHeteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit10.1038/s41467-019-13290-32041-1723https://doaj.org/article/74ea721343ef4cffb39fe57d98dc8c3f2019-11-01T00:00:00Zhttps://doi.org/10.1038/s41467-019-13290-3https://doaj.org/toc/2041-1723Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.Brian S. Y. KimYasuyuki HikitaTakeaki YajimaHarold Y. HwangNature PortfolioarticleScienceQENNature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
institution	DOAJ
collection	DOAJ
language	EN
topic	Science Q
spellingShingle	Science Q Brian S. Y. Kim Yasuyuki Hikita Takeaki Yajima Harold Y. Hwang Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
description	Two-dimensional heterostructures combined with vertical geometries trigger superior functionalities in fundamental studies and applications. Here, the authors report vertical perovskite hot-electron transistors integrated with perovskite one-dimensional edge contacts down to the monolayer limit.
format	article
author	Brian S. Y. Kim Yasuyuki Hikita Takeaki Yajima Harold Y. Hwang
author_facet	Brian S. Y. Kim Yasuyuki Hikita Takeaki Yajima Harold Y. Hwang
author_sort	Brian S. Y. Kim
title	Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
title_short	Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
title_full	Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
title_fullStr	Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
title_full_unstemmed	Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
title_sort	heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit
publisher	Nature Portfolio
publishDate	2019
url	https://doaj.org/article/74ea721343ef4cffb39fe57d98dc8c3f
work_keys_str_mv	AT briansykim heteroepitaxialverticalperovskitehotelectrontransistorsdowntothemonolayerlimit AT yasuyukihikita heteroepitaxialverticalperovskitehotelectrontransistorsdowntothemonolayerlimit AT takeakiyajima heteroepitaxialverticalperovskitehotelectrontransistorsdowntothemonolayerlimit AT haroldyhwang heteroepitaxialverticalperovskitehotelectrontransistorsdowntothemonolayerlimit
_version_	1718381912395874304

Heteroepitaxial vertical perovskite hot-electron transistors down to the monolayer limit

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